SPZT651T1G The SPZT651T1G is an NPN Silicon Planar Epitaxial Transistor from ON Semiconductor designed for industrial and consumer applications. It features a 60V collector-emitter voltage and 2A collector current.
Mfr Part #:

SPZT651T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SPZT651T1G is an NPN Silicon Planar Epitaxial Transistor from ON Semiconductor designed for industrial and consumer applications. It features a 60V collector-emitter voltage and 2A collector current.
Total Stock: 3,020 pcs
$ Price Range: $0.51

SPZT651T1G Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,020 pcs
3020 pcs On Request 1 On Request On Request On Request On Request On Request

SPZT651T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC = -100 /C 0109 Adc, IE = 0)
Breakdown Voltage (Minimum @ IC = 10 mAdc, IB = 0)
Breakdown Voltage (Minimum @ IE = 10 /C 0109 Adc, IC = 0)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Thermal Resistance
Total Power Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SPZT651T1G Description

Short technical summary and product information.

The SPZT651T1G is an NPN Silicon Planar Epitaxial Transistor manufactured by ON Semiconductor. This device is designed for use in industrial and consumer applications, offering a collector-emitter voltage of 60V and a continuous collector current of 2A.

 

The transistor is housed in a SOT-223 package, which is suitable for medium power surface mount applications. The SOT-223 package ensures level mounting for improved thermal conduction and allows for visual inspection of soldered joints. Its formed leads help absorb thermal stress during soldering, preventing potential damage to the die.

 

Key electrical characteristics include a DC current gain (hFE) of 75 at 1A and 2V, and a Vce saturation of 500mV at 200mA and 2A. The device operates at a frequency of 75MHz and has a maximum junction temperature of 150°C. It is also Pb-Free and Halogen Free.

 

This transistor is designed for applications requiring high current capabilities in a compact surface-mount form factor. The SOT-223 package is compatible with wave or reflow soldering processes.

SPZT651T1G Quick Information

Product Type: NPN Transistor
Canonical Name: SPZT651T1G NPN Silicon Planar Epitaxial Transistor
Subcategory: Single

SPZT651T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

SPZT651T1G Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPZT651T1G Features

  • NPN Silicon Planar Epitaxial Transistor
  • 60V Collector-Emitter Voltage
  • 2A Continuous Collector Current
  • SOT-223 Surface Mount Package
  • Pb-Free and Halogen Free

SPZT651T1G Applications

  • Designed for industrial applications
  • Suitable for consumer electronics
  • Medium power surface mount needs
  • High current switching tasks

SPZT651T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SPZT651T1G?

60 Vdc.

What package is the SPZT651T1G available in?

Surface mount SOT-223 (TO-261-4, TO-261AA).

What is the maximum junction temperature?

150°C.

What is the maximum collector current?

2 A.

What is the power dissipation rating?

800 mW at 25°C ambient.

What is the DC current gain (hFE)?

Minimum 75 at 1A collector current and 2V collector-emitter voltage.

What is the transition frequency?

75 MHz typical.

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