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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = -100 /C 0109 Adc, IE = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 mAdc, IB = 0) | |
| Breakdown Voltage (Minimum @ IE = 10 /C 0109 Adc, IC = 0) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Thermal Resistance | |
| Total Power Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SPZT651T1G is an NPN Silicon Planar Epitaxial Transistor manufactured by ON Semiconductor. This device is designed for use in industrial and consumer applications, offering a collector-emitter voltage of 60V and a continuous collector current of 2A.
The transistor is housed in a SOT-223 package, which is suitable for medium power surface mount applications. The SOT-223 package ensures level mounting for improved thermal conduction and allows for visual inspection of soldered joints. Its formed leads help absorb thermal stress during soldering, preventing potential damage to the die.
Key electrical characteristics include a DC current gain (hFE) of 75 at 1A and 2V, and a Vce saturation of 500mV at 200mA and 2A. The device operates at a frequency of 75MHz and has a maximum junction temperature of 150°C. It is also Pb-Free and Halogen Free.
This transistor is designed for applications requiring high current capabilities in a compact surface-mount form factor. The SOT-223 package is compatible with wave or reflow soldering processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 Vdc.
Surface mount SOT-223 (TO-261-4, TO-261AA).
150°C.
2 A.
800 mW at 25°C ambient.
Minimum 75 at 1A collector current and 2V collector-emitter voltage.
75 MHz typical.