| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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75 pcs
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75 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SPZT2907AT1G from On Semiconductor is a PNP Silicon Epitaxial transistor suitable for linear and switching applications. It is housed in a SOT-223 surface-mount package, designed for medium power applications.
Key electrical specifications include a maximum collector-emitter voltage of 60V and a continuous collector current of 600mA. The device offers a maximum power dissipation of 1.5W and a transition frequency of 200MHz. Its DC current gain (hFE) is a minimum of 100 at 150mA and 10V, with a Vce saturation of 1.6V at 50mA, 500mA.
The SOT-223 package ensures level mounting for improved thermal conduction and allows for visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, preventing damage to the die. This transistor is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
This component is ideal for general amplification and switching applications, offering high-speed switching capabilities and reliable current gain. It is commonly used in voltage regulation, motor control, load switching, and LED driving circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60 Vdc, and the maximum collector-base voltage is also 60 Vdc.
It is available in a SOT-223 (TO-261) surface mount package.
The operating and storage temperature range is -65°C to +150°C.
The maximum continuous collector current is 600 mA (or -600 mAdc).
The total device dissipation is 1.5 W at TA = 25°C.
The minimum DC current gain is 100 at Ic = 150 mA, Vce = 10 V.
The transition frequency is 200 MHz.