| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
1,606 pcs
|
1606 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon SPW55N80C3 is a high-performance N-channel power MOSFET designed for various power applications. It features Infineon's advanced CoolMOS™ technology, enabling efficient power conversion.
This MOSFET supports a drain-source voltage (Vds) range of up to 950V, making it suitable for high-voltage applications. The N-channel configuration and CoolMOS™ technology contribute to its robust electrical characteristics.
As a power MOSFET, the SPW55N80C3 is typically used in power supply units, motor control, and other power management circuits where efficient switching and high voltage handling are critical. Its specific package and thermal characteristics would be detailed in its datasheet, influencing its integration into electronic designs.
The maximum drain-source voltage is 950 V.
The SPW55N80C3 has an N-channel type.
The SPW55N80C3 uses CoolMOS™ technology.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.