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SPW35N60C3 The Infineon SPW35N60C3 is an N-Channel Power MOSFET with a 650V drain-source voltage and 21.9A continuous drain current. It is housed in a PG-TO247-3 package.
Mfr Part #:

SPW35N60C3

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon SPW35N60C3 is an N-Channel Power MOSFET with a 650V drain-source voltage and 21.9A continuous drain current. It is housed in a PG-TO247-3 package.
✓ Total Stock: 21,696 pcs

SPW35N60C3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
19,976 pcs
On Request
19976 pcs On Request 1 On Request On Request 1805+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,602 pcs
On Request
1602 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
118 pcs
On Request
118 pcs On Request 1 On Request On Request 05+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SPW35N60C3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SPW35N60C3 Description

Short technical summary and product information.

The Infineon SPW35N60C3 is a high-voltage N-Channel Power MOSFET utilizing CoolMOS technology. It offers a maximum drain-source voltage of 650V and a continuous drain current of 21.9A at 100°C case temperature, with a peak capability of 34.6A at 25°C.

 

Key electrical characteristics include a low on-state resistance of 0.1 Ohms at 21.9A and 25°C, and a gate threshold voltage typically around 3V. The device features ultra-low gate charge and effective capacitances, contributing to efficient switching performance with typical rise and fall times of 5ns and 10ns respectively.

 

Designed for high-voltage applications, this MOSFET is rated for extreme dv/dt and periodic avalanche conditions. It comes in a PG-TO247-3 package suitable for through-hole mounting, with a thermal resistance from junction to case of 0.4 K/W, enabling effective heat dissipation.

SPW35N60C3 Quick Information

Product Type: N-Channel Power MOSFET
Series: C3
Canonical Name: Infineon SPW35N60C3 N-Channel Power MOSFET
Subcategory: N-Channel

SPW35N60C3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPW35N60C3 Features

  • 650V drain-source breakdown voltage.
  • 21.9A continuous drain current.
  • 0.1 Ohm maximum on-state resistance.
  • PG-TO247-3 package for through-hole mounting.
  • CoolMOS technology for high efficiency.

SPW35N60C3 Applications

  • Suitable for high voltage applications.
  • Efficient power switching designs.
  • Used in power supply circuits.
  • Ideal for motor control systems.

SPW35N60C3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SPW35N60C3?

The maximum drain-source voltage is 650V.

What is the continuous drain current of the SPW35N60C3?

The continuous drain current is 21.9A at 100°C case temperature and 34.6A at 25°C case temperature.

What is the on-state resistance of the SPW35N60C3?

The maximum on-state resistance is 0.1 Ohms at 21.9A drain current and 25°C junction temperature.

What package type is the SPW35N60C3 available in?

The SPW35N60C3 is available in the PG-TO247-3 package.

What is the typical gate threshold voltage for this MOSFET?

The typical gate threshold voltage is 3V.

What is the power dissipation rating for the SPW35N60C3?

The power dissipation is rated at 313W at 25°C case temperature.

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