| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,034 pcs
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5034 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon Technologies SPW35N60C3 is a high-performance N-Channel MOSFET transistor built with CoolMOS™ technology. It offers a robust 650V drain-source breakdown voltage and a continuous drain current of 21.9A at 100°C, with a pulsed capability up to 103.8A. The transistor exhibits a low on-state resistance of 0.1 Ohm at 25°C, contributing to efficient power handling.
Key electrical characteristics include a gate threshold voltage typically around 3V and a total gate charge of 150-200 nC. Dynamic characteristics such as input capacitance (Ciss) are 4500 pF, output capacitance (Coss) are 1500 pF, and reverse transfer capacitance (Crss) are 100 pF.
This device is designed for high voltage applications and features periodic avalanche rating and extreme dv/dt rating. It is housed in a PG-TO247-3 package suitable for through-hole mounting. The operating temperature range is -55°C to 150°C, with a thermal resistance (junction-to-case) of 0.4 K/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The continuous drain current at 100°C is 21.9A.
The typical on-state resistance at 25°C is 0.081 Ohms.
The package type is PG-TO247-3.
The operating temperature range is -55°C to 150°C.
The thermal resistance from junction to case is 0.4 K/W.