| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
630 pcs
|
630 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Input Capacitance | |
| Medical Grade | |
| Military Grade | |
| Power Dissipation | |
| Tape & Reel |
The Infineon SPW32N50C3 is a high-voltage N-channel power MOSFET utilizing Cool MOS™ technology. It features a drain-source breakdown voltage of 500V and a maximum continuous drain current of 32A at 25°C case temperature, reducing to 20A at 100°C.
Key electrical characteristics include a low on-state resistance (RDS(on)) of 0.09 Ω typical at 25°C and 20A, and a gate threshold voltage (VGS(th)) typically 3V. The device boasts ultra-low gate charge and effective capacitances, contributing to efficient switching performance with typical turn-on delay times of 20ns and fall times of 10ns.
This MOSFET is rated for a wide operating temperature range from -55°C to +150°C. It comes in the PG-TO247 package, suitable for through-hole mounting.
The SPW32N50C3 is designed for high-voltage applications requiring robust performance and efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 500V.
The typical on-state resistance is 0.09 Ohms at 25°C and 20A.
The continuous drain current is 32A at 25°C and 20A at 100°C.
The operating and storage temperature range is -55°C to +150°C.
This MOSFET is in the PG-TO247 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.