| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,619 pcs
|
1619 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Input Capacitance | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation | |
| SVHC Present |
The Infineon SPW24N60C3 is a high-voltage N-channel Power MOSFET utilizing Cool MOS technology. It offers a maximum drain-source breakdown voltage of 600V and a continuous drain current of 24.3A at 25°C.
Key electrical characteristics include a low drain-source on-state resistance of 0.16 Ohms at 25°C and a gate threshold voltage between 2.1V and 3.9V. The device also features fast switching times with a turn-on delay of 13ns and a fall time of 14ns.
Packaged in a PG-TO247, this MOSFET is suitable for through-hole mounting. It operates across a wide temperature range from -55°C to +150°C, making it robust for various environmental conditions. The device is rated for periodic avalanche and extreme dv/dt.
This component is designed for high-voltage applications requiring efficient power switching and high reliability.
The minimum drain-source breakdown voltage is 600V at VGS=0V and ID=0.25mA.
The maximum continuous drain current is 24.3A at TC=25°C and 15.4A at TC=100°C.
The typical drain-source on-state resistance is 0.16Ω at VGS=10V, ID=15.4A, and Tj=25°C.
The operating and storage temperature range is -55°C to +150°C.
The SPW24N60C3 is available in a PG-TO247 package with through-hole mounting.
The maximum power dissipation is 240W at TC=25°C.
The gate threshold voltage ranges from 2.1V minimum to 3.9V maximum, with a typical value of 3V at ID=1200µA and VGS=VDS.