| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,140 pcs
|
1140 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPW20N60S5FKSA1 is a high-performance N-Channel Power MOSFET from the Cool MOS S5 family. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 20A at 25°C case temperature.
This MOSFET boasts a low on-state resistance (Rds(on)) of 0.19 Ohms at 13A and 10V gate drive, along with a gate threshold voltage (Vgs(th)) of 4.5V. Its ultra-low gate charge and effective capacitances contribute to efficient switching performance, with typical turn-on delay times of 120ns and fall times of 30ns.
Designed with advanced high voltage technology, the SPW20N60S5FKSA1 is rated for periodic avalanche and extreme dv/dt, making it suitable for demanding power applications. It operates across a wide temperature range from -55°C to 150°C.
The component is housed in a PG-TO247-3-1 package, designed for through-hole mounting. Its robust thermal characteristics include a junction-to-case thermal resistance of 0.6 K/W, supporting a maximum power dissipation of 208W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.43 | $6.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 600V at VGS=0V and ID=0.25mA.
The maximum continuous drain current is 20A at TC=25°C and 13A at TC=100°C.
At VGS=10V, ID=13A, and TJ=25°C, the on-state resistance is 0.16Ω typical and 0.19Ω maximum. At TJ=150°C, the maximum is 0.43Ω.
The operating junction temperature range is -55°C to 150°C.
The device comes in a TO-247-3 through-hole package with supplier package PG-TO247-3-1.
Total gate charge is 79nC typical and 103nC maximum at VDD=350V, ID=20A, and VGS=0 to 10V.
Gate threshold voltage is 3.5V minimum, 4.5V nominal, and 5.5V maximum at ID=1000µA and VGS=VDS.