Mfr Part #:

SPW20N60S5

Mfr Name: Infineon

The Infineon SPW20N60S5 is a 600V N-channel power MOSFET from the CoolMOS family. It offers a continuous drain current of 20A and a low on-state resistance.

✓ Total Stock: 2,288 pcs

$ Price Range: $2.81

SPW20N60S5 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	2,284 pcs On Request	2284 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	4 pcs On Request	4 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SPW20N60S5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Input Capacitance	3000 pF
Mounting Type	Through Hole
Power Dissipation	208 W

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SPW20N60S5 Description

Short technical summary and product information.

The Infineon SPW20N60S5 is a high-performance N-channel power MOSFET utilizing Infineon's CoolMOS technology. It is designed for high voltage applications, featuring a drain-source breakdown voltage of 600V and a maximum continuous drain current of 20A at 25°C.

Key electrical characteristics include a low on-state resistance (RDS(on)) of 0.19 Ohms at 25°C and 13A, and a gate threshold voltage (VGS(th)) typically around 4.5V. The device boasts ultra-low gate charge and effective capacitances, contributing to efficient switching performance with typical turn-on delay times of 120ns and fall times of 30ns.

This MOSFET is rated for a wide operating temperature range from -55°C to +150°C. It comes in the PG-TO247 package, suitable for through-hole mounting. The component is designed for applications requiring high voltage handling and efficient power conversion.

SPW20N60S5 Quick Information

Product Type: Power MOSFET

Series: CoolMOS S5

Canonical Name: Infineon SPW20N60S5 N-channel Power MOSFET

Subcategory: N-Channel Power MOSFET

SPW20N60S5 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SPW20N60S5 Estimated Pricing

Qty	Low	High
1+	$2.81	$2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPW20N60S5 Features

600V drain-source breakdown voltage.
20A maximum continuous drain current.
0.19 Ohm typical on-state resistance.
Ultra low gate charge.
PG-TO247 package for through-hole mounting.

SPW20N60S5 Applications

High voltage power switching.
Efficient power conversion circuits.
Switch mode power supplies.
Motor control applications.

SPW20N60S5 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the SPW20N60S5?

The minimum drain-source breakdown voltage is 600V at VGS=0V and ID=0.25mA.

What is the maximum continuous drain current?

The maximum continuous drain current is 20A at case temperature 25°C and 13A at 100°C.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +150°C.

What package is the SPW20N60S5 available in?

The device is offered in a PG-TO247 through-hole package.

What is the typical on-resistance of the SPW20N60S5?

The typical drain-source on-state resistance is 0.16 ohms at VGS=10V, ID=13A, Tj=25°C. Maximum is 0.19 ohms.

What is the typical gate charge?

The total gate charge is 79 nC typical (103 nC maximum) at VDD=350V, ID=20A, VGS=0 to 10V.

What is the gate threshold voltage range?

The gate threshold voltage ranges from 3.5V minimum to 5.5V maximum at ID=1000µA, VGS=VDS.

SPW20N60S5 Alternate Parts

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SPP20N60S5

Infineon

The Infineon SPP20N60S5 is an N-channel Power MOSFET with a 600V breakdown voltage and 0.19 Ohm on-state resistance. It is supplied in a TO-220 package.

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