| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies SPW17N80C3 is a high-performance N-Channel Power MOSFET designed for various applications. It features a maximum drain-source breakdown voltage of 800V and a continuous drain current rating of 17A. The MOSFET exhibits a low on-resistance of 290 mOhms, contributing to efficient power handling.
This component operates with a gate-source voltage of 10V and has a gate threshold voltage of 2.1V. It is designed for enhancement mode operation and belongs to the CoolMOS family, indicating its suitability for power applications requiring high efficiency and reliability. The operating temperature range is from -55°C to +150°C.
The SPW17N80C3 is packaged in a TO-247 case with a through-hole mounting style, making it suitable for robust power circuit designs. The typical turn-on delay time is 25 ns, and the typical turn-off delay time is 72 ns, with a fall time of 6 ns and a rise time of 15 ns, facilitating fast switching performance.
Key electrical characteristics include a power dissipation of 227W and a gate charge of 88 nC. The device is manufactured using silicon technology and is configured as a single channel transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 800V.
The continuous drain current is 17A.
The drain-source on-resistance is 290 mOhms.
The gate-source threshold voltage is 2.1V.
The operating temperature range is from -55°C to +150°C.
The SPW17N80C3 is supplied in a TO-247 package.
The SPW17N80C3 is mounted using the through-hole method.