| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
470 pcs
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470 pcs | On Request | 1 | On Request | On Request | 0202+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPW11N60S5 is a high-voltage N-channel power MOSFET. It features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 11A at a case temperature.
Key electrical characteristics include a maximum on-state resistance (Rds On) of 380mOhm at 7A and 10V, a gate threshold voltage (Vgs(th)) of 5.5V at 500µA, and an input capacitance (Ciss) of 1460pF at 25V.
This MOSFET is housed in a TO-247-3 package and supports through-hole mounting. It operates over a wide temperature range from -55°C to 150°C (TJ).
Features such as ultra-low gate charge and improved transconductance make it suitable for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The continuous drain current is 11A.
The maximum Rds On is 380mOhm at 7A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a TO-247-3 package.
The gate charge is 54 nC at 10V.