| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,757 pcs
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7757 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
1,159 pcs
|
1159 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The Infineon SPW11N60CFD is a robust N-Channel Power MOSFET suitable for various power switching applications. It offers a high breakdown voltage of 600V and a continuous drain current capability of 11A, making it a reliable choice for demanding designs.
Key electrical characteristics include a low on-resistance of 0.35 Ohms and a gate charge of 30nC, contributing to efficient operation. The MOSFET is rated for a maximum operating temperature of 150°C, ensuring performance in elevated thermal environments.
Packaged in the industry-standard TO-247 through-hole configuration, the SPW11N60CFD facilitates straightforward integration into circuit designs. Its specifications make it suitable for applications requiring efficient power management and high voltage handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum voltage rating for the SPW11N60CFD is 600V.
The continuous drain current for the SPW11N60CFD is 11A.
The on-resistance of the SPW11N60CFD is 0.35 Ohms.
The operating temperature for the SPW11N60CFD is up to 150°C.
The SPW11N60CFD is available in the TO-247 package.
The SPW11N60CFD is mounted using the through-hole method.