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SPW11N60CFD The Infineon Technologies SPW11N60CFD is an N-Channel Power MOSFET designed for various applications. It offers a 600V drain-to-source voltage and a continuous drain current of 11A.
Mfr Part #:

SPW11N60CFD

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPW11N60CFD is an N-Channel Power MOSFET designed for various applications. It offers a 600V drain-to-source voltage and a continuous drain current of 11A.
✓ Total Stock: 8,777 pcs
$ Price Range: $2.56

SPW11N60CFD Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
8,777 pcs
On Request
8777 pcs On Request 1 On Request On Request On Request On Request On Request
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SPW11N60CFD Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SPW11N60CFD Description

Short technical summary and product information.

The Infineon Technologies SPW11N60CFD is an N-Channel Power MOSFET with a maximum drain-to-source voltage (Vdss) of 600V. It is rated for a continuous drain current of 11A at a case temperature and has a maximum power dissipation of 125W.

 

This MOSFET features a low on-resistance (Rds On) of 440mOhm at 7A and 10V Vgs, with a gate charge (Qg) of 64nC at 10V. The input capacitance (Ciss) is 1200pF at 25V.

 

The device operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-247-3 package and utilizes Through Hole mounting.

 

The SPW11N60CFD is built using MOSFET (Metal Oxide) technology and is classified as an N-Channel FET.

SPW11N60CFD Quick Information

Product Type: MOSFET
Canonical Name: SPW11N60CFD N-Channel Power MOSFET
Subcategory: N-Channel

SPW11N60CFD Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPW11N60CFD Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPW11N60CFD Features

  • 600V drain-to-source voltage rating.
  • 11A continuous drain current.
  • 440mOhm maximum on-resistance.
  • TO-247-3 through-hole package.
  • Operates to 150°C.

SPW11N60CFD Applications

  • Suitable for power switching circuits.
  • Used in power supply designs.
  • Applicable for motor control.
  • Ideal for general purpose switching.

SPW11N60CFD FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SPW11N60CFD?

600V.

What is the maximum continuous drain current of the SPW11N60CFD?

11A at case temperature Tc.

What is the maximum on-resistance of the SPW11N60CFD?

440mΩ at 7A drain current and 10V gate-source voltage.

What package is the SPW11N60CFD available in?

TO-247-3 through-hole package with supplier device package PG-TO247-3-21.

What is the operating junction temperature range of the SPW11N60CFD?

-55°C to 150°C.

What type of transistor is the SPW11N60CFD?

N-Channel MOSFET with metal-oxide semiconductor technology.

What is the gate charge of the SPW11N60CFD?

64nC at 10V gate-source voltage.

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