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SPU03N60S5

The Infineon Technologies SPU03N60S5 is an N-Channel Power MOSFET with a 600V breakdown voltage and 1.4 Ohm RDS(on). It is available in TO-251 and TO-252 packages.

✓ Total Stock: 1,500 pcs

$ Price Range: $2.56

SPU03N60S5 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	1,500 pcs On Request	1500 pcs	On Request	1	On Request	On Request	1519+	On Request	On Request

SPU03N60S5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Input Capacitance	420 pF
Mounting Type	Through Hole
Power Dissipation	38 W

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SPU03N60S5 Description

Short technical summary and product information.

The Infineon Technologies SPU03N60S5 is a high-voltage N-Channel Power MOSFET designed with Cool MOS™ technology. It offers a breakdown voltage of 600V and a low on-state resistance of 1.4 Ohm at 25°C (VGS=10V, ID=2A). The continuous drain current is rated at 3.2A at 25°C case temperature and 2A at 100°C case temperature.

Key electrical characteristics include a gate threshold voltage ranging from 3.5V to 5.5V, input capacitance of 420pF, and output capacitance of 150pF. The device features fast switching times with a turn-on delay of 35ns and a fall time of 15ns.

This MOSFET is available in two package types: PG-TO251 and PG-TO252. The operating and storage temperature range is from -55°C to +150°C. Thermal resistance from junction to case is 3.3 K/W, and junction to ambient is 75 K/W for leaded packages and 50 K/W for SMD versions with adequate cooling.

The SPU03N60S5 is suitable for various power applications requiring high voltage and efficient switching performance.

SPU03N60S5 Quick Information

Product Type: MOSFET

Series: S5

Canonical Name: SPU03N60S5

Subcategory: N-Channel

SPU03N60S5 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SPU03N60S5 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPU03N60S5 Features

600V drain-source breakdown voltage.
1.4 Ohm typical on-state resistance.
3.2A continuous drain current.
Low gate charge characteristics.
Available in TO-251 and TO-252 packages.

SPU03N60S5 Applications

Suitable for high-voltage applications.
Efficient power switching.
Designed for power supply circuits.
Used in industrial applications.
Ideal for general purpose power conversion.

SPU03N60S5 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the SPU03N60S5?

The minimum drain-source breakdown voltage is 600V at VGS=0V and ID=0.25mA.

What is the maximum continuous drain current of the SPU03N60S5?

The maximum continuous drain current is 3.2A at 25°C case temperature and 2A at 100°C.

What is the on-state resistance of the SPU03N60S5?

The typical on-state resistance is 1.26Ω and the maximum is 1.4Ω at VGS=10V, ID=2A, and Tj=25°C.

What is the operating temperature range of the SPU03N60S5?

The operating junction and storage temperature range is -55°C to +150°C.

What packages are available for the SPU03N60S5?

The SPU03N60S5 is available in TO-251 (through-hole) and TO-252 (surface-mount) packages.

What is the gate threshold voltage of the SPU03N60S5?

The gate threshold voltage ranges from 3.5V minimum to 5.5V maximum, with a typical value of 4.5V at ID=135µA and VGS=VDS.

What is the total gate charge of the SPU03N60S5?

The typical total gate charge is 12.4nC and the maximum is 16nC at VDD=350V, ID=3.2A, and VGS=0 to 10V.