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SPU01N60C3 The Infineon Technologies SPU01N60C3 is an N-Channel Power MOSFET designed for high voltage applications. It offers a 600V drain-source voltage and 0.8A continuous drain current.
Mfr Part #:

SPU01N60C3

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPU01N60C3 is an N-Channel Power MOSFET designed for high voltage applications. It offers a 600V drain-source voltage and 0.8A continuous drain current.
✓ Total Stock: 9,010 pcs
$ Price Range: $2.56

SPU01N60C3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
9,000 pcs
On Request
9000 pcs On Request 1 On Request On Request 1449+ On Request On Request
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
10 pcs
On Request
10 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SPU01N60C3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SPU01N60C3 Description

Short technical summary and product information.

The Infineon Technologies SPU01N60C3 is an N-Channel Power MOSFET featuring Cool MOS™ technology. It is designed for high voltage applications with a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 0.8A at 25°C.

 

Key electrical characteristics include a low on-state resistance (Rds On) of 6 Ohms at 500mA and 10V gate drive, a gate threshold voltage (Vgs(th)) of 3V typical, and a total gate charge (Qg) of 3.9nC typical. The device also boasts features like ultra-low gate charge, periodic avalanche rating, and extreme dv/dt rating.

 

This MOSFET is housed in a PG-TO251-3 package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C. The power dissipation is rated at 11W at 25°C case temperature.

 

With its high voltage capability and efficient switching characteristics, the SPU01N60C3 is suitable for various power switching applications.

SPU01N60C3 Quick Information

Product Type: MOSFET
Canonical Name: SPU01N60C3 N-Channel Power MOSFET
Subcategory: N-Channel

SPU01N60C3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPU01N60C3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPU01N60C3 Features

  • 600V drain-source voltage rating.
  • 0.8A continuous drain current.
  • 6 Ohm maximum Rds On.
  • Ultra low gate charge.
  • TO-251 through-hole package.

SPU01N60C3 Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for lighting control systems.
  • Applicable in consumer electronics.

SPU01N60C3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of SPU01N60C3?

600V.

What is the continuous drain current rating?

0.8A at 25°C case temperature, derated to 0.5A at 100°C.

What is the on-resistance of SPU01N60C3?

Maximum 6 Ohm at VGS=10V, ID=0.5A, Tj=25°C.

What package is SPU01N60C3 available in?

PG-TO251-3 (TO-251-3 Short Leads, IPak, TO-251AA) through-hole package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

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