| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,362 pcs
|
3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,600 pcs
|
2600 pcs | On Request | 1 | On Request | On Request | 0726+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPP35N10 is a SIPMOS Power MOSFET featuring an N-Channel enhancement mode configuration. It is rated for a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 35A at 25°C case temperature, with a reduced current rating of 26.4A at 100°C. The device exhibits a low on-state resistance (Rds(on)) of 44mOhm maximum at 26.4A and 10V gate-source voltage.
This MOSFET operates within a wide temperature range of -55°C to 175°C and has a maximum power dissipation of 150W at 25°C. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4V maximum and input capacitance (Ciss) of 1570pF maximum. Dynamic characteristics such as turn-on delay time are specified at 18.3ns maximum.
The SPP35N10 is housed in a TO-220-3 package, suitable for through-hole mounting. It is avalanche rated and dv/dt rated, making it suitable for demanding applications. The device also includes a reverse diode with a continuous forward current rating of 35A.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 V minimum at VGS=0V, ID=1mA.
TO-220-3 through-hole package (PG-TO220-3-1).
-55°C to 175°C.
35 A continuous at 25°C case temperature, 140 A pulsed.
Typically 3 V at VGS=VDS, ID=83µA.
44 mOhm maximum at VGS=10V, ID=26.4A.
150 W maximum at 25°C case temperature.