| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,900 pcs
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2900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon SPP24N60C3 is a high-performance N-channel power MOSFET utilizing Cool MOS™ technology. It is designed for demanding applications requiring high voltage and efficient power handling.
Key electrical specifications include a drain-source breakdown voltage of 600V and a typical on-state resistance (RDS(on)) of 0.16 Ohms at 25°C. The continuous drain current is rated at 24.3A at 25°C, with a pulsed drain current capability of 72.9A. It also features a low gate charge and high transconductance for improved switching performance.
This MOSFET is housed in a PG-TO220-3-1 package, suitable for through-hole mounting. The operating temperature range is -55°C to +150°C, and it has a thermal resistance junction-to-case of 0.52 K/W.
Features like periodic avalanche rating and extreme dv/dt rating make it suitable for robust power designs.
The maximum drain-source breakdown voltage (VDS @ Tjmax) is 650V.
The typical on-state resistance (RDS(on)) at 25°C is 0.16 Ohms.
The continuous drain current (ID) at 25°C is 24.3A.
The SPP24N60C3 is supplied in the PG-TO220-3-1 package.
The operating and storage temperature range is -55°C to +150°C.