| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,048 pcs
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1048 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon SPP20N60S5 is a high-voltage power transistor utilizing Cool MOS™ technology. It offers a breakdown voltage of 600V and a continuous drain current rating of 20A at 25°C.
Key electrical characteristics include a low on-state resistance (RDS(on)) of 0.19 Ohms at 25°C and a gate threshold voltage typically around 4.5V. The transistor features fast switching times with a rise time of 25ns and a fall time of 30ns.
Designed for power applications, this MOSFET is rated for a maximum power dissipation of 208W at 25°C. It operates within a temperature range of -55°C to +150°C.
The SPP20N60S5 comes in a standard PG-TO220 package, suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600V.
The continuous drain current is 20A at 25°C and 13A at 100°C.
The typical on-state resistance is 0.19 Ohms at 25°C.
The gate threshold voltage is typically 4.5V.
It is available in the PG-TO220 package.
The operating and storage temperature range is -55°C to +150°C.