| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPP16N50C3 is an N-Channel Power MOSFET with a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current of 16A (Tc).
This MOSFET features a low on-resistance (Rds On) of 280mOhm at 10A and 10V, and a gate charge (Qg) of 66nC at 10V. The gate threshold voltage (Vgs(th)) is 3.9V at 675µA, with a maximum gate-source voltage of ±20V.
Operating within a temperature range of -55°C to 150°C (TJ), the SPP16N50C3 has a maximum power dissipation of 160W (Tc). It utilizes MOSFET (Metal Oxide) technology.
Packaged in a TO-220-3 configuration, this component is designed for through-hole mounting. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 500V.
The continuous drain current is 16A.
The maximum on-resistance (Rds On) is 280mOhm at 10A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
It is in a TO-220-3 package.
It is designed for through-hole mounting.