| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
|
8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SPP1421DMR2G is an N-Channel MOSFET manufactured by On Semiconductor. This component is designed for surface mounting and operates with a drain-source voltage of up to 30V.
Key electrical characteristics include a maximum continuous drain current of 50A at ambient temperature (Ta) and 315A at case temperature (Tc). The on-resistance (Rds On) is a maximum of 0.9mOhm at 20A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2.2V at 200µA. Input capacitance (Ciss) is rated at a maximum of 9550pF at 15V drain-source voltage.
Thermal performance includes a maximum power dissipation of 3.9W at ambient temperature and 150W at case temperature. The operating temperature range is from -55°C to 175°C (junction temperature).
This MOSFET is suitable for various power switching applications where surface mounting is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 30V.
The maximum continuous drain current is 50A at ambient temperature and 315A at case temperature.
The maximum on-resistance is 0.9mOhm at 20A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C.
It is an N-Channel MOSFET using Metal Oxide technology.
The SPP1421DMR2G is a surface mount device.