SPP11N80C3XKSA1 The Infineon Technologies SPP11N80C3XKSA1 is an N-Channel MOSFET with a breakdown voltage of 800V and a continuous drain current of 11A. It is housed in a TO-220-3 package.
Mfr Part #:

SPP11N80C3XKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPP11N80C3XKSA1 is an N-Channel MOSFET with a breakdown voltage of 800V and a continuous drain current of 11A. It is housed in a TO-220-3 package.
✓ Total Stock: 9,920 pcs
$ Price Range: $2.56

SPP11N80C3XKSA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,920 pcs
9920 pcs On Request 1 On Request On Request On Request On Request On Request

SPP11N80C3XKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SPP11N80C3XKSA1 Description

Short technical summary and product information.

The Infineon Technologies SPP11N80C3XKSA1 is a high-voltage N-Channel Power MOSFET from the CoolMOS C3 series. It features a revolutionary high voltage technology with an extreme dv/dt rating and high peak current capability.

 

Key electrical specifications include a Drain-Source Breakdown Voltage of 800V and a Continuous Drain Current of 11A at 25°C case temperature. The Drain-Source On-State Resistance is a maximum of 450mOhm at 7.1A and 10V gate drive. The typical Gate Charge is 85nC at 10V.

 

This MOSFET is designed for industrial applications with high DC bulk voltage and switching applications, such as active clamp forward converters. It operates within a temperature range of -55°C to 150°C.

 

The component is supplied in a standard TO-220-3 package, suitable for through-hole mounting. It also offers Pb-free lead plating and is RoHS compliant.

SPP11N80C3XKSA1 Quick Information

Product Type: MOSFET
Series: C3
Canonical Name: Infineon Technologies SPP11N80C3XKSA1 N-Channel MOSFET
Subcategory: N-Channel

SPP11N80C3XKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPP11N80C3XKSA1 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPP11N80C3XKSA1 Features

  • 800V drain-source breakdown voltage.
  • 11A continuous drain current.
  • 450mOhm maximum Rds(on).
  • 85nC typical gate charge.
  • TO-220-3 through-hole package.

SPP11N80C3XKSA1 Applications

  • High-voltage power supply circuits
  • Switch mode power supplies (SMPS)
  • Motor control and motor drives
  • Power factor correction (PFC)

SPP11N80C3XKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating junction temperature range of this MOSFET?

The operating junction temperature range is -55°C to 150°C.

What package is available for the SPP11N80C3XKSA1?

It is available in a TO-220-3 through-hole package (PG-TO220-3-1).

What is the maximum drain-source voltage rating?

The minimum drain-source breakdown voltage is 800V.

What is the continuous drain current rating?

The continuous drain current is 11A at Tc=25°C.

What is the typical on-state resistance?

Typical on-state resistance is 0.39 Ohm at Vgs=10V and Id=7.1A (Tj=25°C), with a maximum of 0.45 Ohm.

What is the gate threshold voltage?

The gate threshold voltage is typically 3V, with a range from 2.1V to 3.9V at Vds=Vgs and Id=0.68mA.

Does this part have a built-in MOSFET protection?

No facts available. The specifications do not include integrated protection circuits.

Home
Account

Categories