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SPP11N80C3 The Infineon SPP11N80C3 is an N-Channel MOSFET with an 800V drain-source breakdown voltage and 11A continuous drain current. It features a low RdsOn of 390 mOhms.
Mfr Part #:

SPP11N80C3

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon SPP11N80C3 is an N-Channel MOSFET with an 800V drain-source breakdown voltage and 11A continuous drain current. It features a low RdsOn of 390 mOhms.
✓ Total Stock: 5,323 pcs

SPP11N80C3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
3,480 pcs
On Request
3480 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,843 pcs
On Request
1843 pcs On Request 1 On Request On Request 13+ On Request On Request
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SPP11N80C3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SPP11N80C3 Description

Short technical summary and product information.

The Infineon SPP11N80C3 is a high-performance N-Channel MOSFET designed for power applications. It boasts a significant 800V drain-source breakdown voltage and can handle a continuous drain current of 11A.

 

Key electrical characteristics include a low drain-source on-resistance (RdsOn) of 390 mOhms and a gate-source threshold voltage of 2.1V. The MOSFET operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 156W.

 

Packaged in a standard TO-220-3 through-hole configuration, this Infineon MOSFET is suitable for various power switching and control applications. Its silicon technology and enhancement mode channel provide efficient operation. The device also features fast switching times, with a typical turn-on delay of 25 ns and a typical turn-off delay of 72 ns.

SPP11N80C3 Quick Information

Product Type: MOSFET
Series: Xpp11n80
Canonical Name: Infineon SPP11N80C3 N-Channel MOSFET
Subcategory: MOSFETs

SPP11N80C3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPP11N80C3 Features

  • 800V drain-source breakdown voltage.
  • 11A continuous drain current capability.
  • Low 390 mOhms drain-source on-resistance.
  • N-Channel enhancement mode MOSFET.
  • TO-220-3 through-hole package.

SPP11N80C3 Applications

  • Suitable for power switching circuits.
  • Used in power supply designs.
  • Ideal for motor control applications.
  • Applicable in general power electronics.

SPP11N80C3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SPP11N80C3?

800V.

What package is the SPP11N80C3 available in?

TO-220-3.

What is the operating temperature range?

-55°C to +150°C.

What is the continuous drain current rating?

11A.

What is the typical on-resistance?

390mOhms.

What is the gate charge?

85nC.

What are the switching times?

Rise time 15ns, fall time 10ns, turn-on delay 25ns, turn-off delay 72ns.

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