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SPP11N60C3 The Infineon SPP11N60C3 is an N-Channel Power MOSFET featuring a 600V breakdown voltage and 11A continuous drain current. It is supplied in a TO-220 package.
Mfr Part #:

SPP11N60C3

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon SPP11N60C3 is an N-Channel Power MOSFET featuring a 600V breakdown voltage and 11A continuous drain current. It is supplied in a TO-220 package.
✓ Total Stock: 1,931 pcs
$ Price Range: $0.99

SPP11N60C3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,669 pcs
On Request
1669 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
201 pcs
On Request
201 pcs On Request 1 On Request On Request 1851+ On Request On Request
Partservice ✓
Non-Authorised Inventory information
61 pcs
On Request
61 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SPP11N60C3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
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Power Dissipation
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SPP11N60C3 Description

Short technical summary and product information.

The Infineon SPP11N60C3 is a high-voltage N-Channel Power MOSFET from the Cool MOS family. It offers a breakdown voltage of 650V and a continuous drain current of 11A at 25°C.

 

Key electrical characteristics include a low on-state resistance of 0.38 Ohms at 7A and 25°C, and a gate threshold voltage between 2.1V and 3.9V. The device also features a typical input capacitance of 1200pF and output capacitance of 390pF.

 

Designed with advanced high-voltage technology, this MOSFET is suitable for various power applications. It operates within a temperature range of -55°C to +150°C and is housed in a TO-220-3 package for through-hole mounting.

SPP11N60C3 Quick Information

Product Type: MOSFET
Canonical Name: Infineon SPP11N60C3 N-Channel Power MOSFET
Subcategory: N-Channel

SPP11N60C3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPP11N60C3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPP11N60C3 Features

  • 650V drain-source breakdown voltage.
  • 11A continuous drain current.
  • 0.38 Ohm typical on-state resistance.
  • Ultra low gate charge technology.
  • TO-220-3 package for through-hole mounting.

SPP11N60C3 Applications

  • Suitable for high voltage power supplies.
  • Used in power factor correction circuits.
  • Ideal for switch mode power supplies.
  • Applicable in lighting control systems.

SPP11N60C3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the SPP11N60C3?

The continuous drain current is 11A at 25°C and 7A at 100°C.

What is the breakdown voltage of the SPP11N60C3 MOSFET?

The drain-source breakdown voltage is 600V, and the drain-source avalanche breakdown voltage is 700V.

What is the typical on-state resistance (RDS(on)) for the SPP11N60C3?

The typical on-state resistance is 0.34 Ohms at 25°C and 1.1 Ohms at 150°C, both measured at 7A.

What is the operating temperature range for the SPP11N60C3?

The operating and storage temperature range is -55°C to +150°C.

What package type is the SPP11N60C3 MOSFET supplied in?

The SPP11N60C3 is supplied in a TO-220-3 package.

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