| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,245 pcs
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5245 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPP10N10L is a SIPMOS N-Channel Power MOSFET designed for various applications. It features a drain-source breakdown voltage (VDS) of 100V and a continuous drain current (ID) of 10.3A at 25°C, reducing to 8.1A at 100°C.
Key electrical characteristics include a maximum gate threshold voltage (VGS(th)) of 2V at 21µA and a low on-state resistance (RDS(on)) of 154mOhm at 8.1A and 10V gate drive. The device supports a gate source voltage (VGS) of up to ±20V and has a maximum power dissipation (Ptot) of 50W at 25°C.
Dynamic characteristics include input capacitance (Ciss) of 444pF, output capacitance (Coss) of 90pF, and reverse transfer capacitance (Crss) of 63pF. Turn-on delay time is 6.9ns, rise time is 28.7ns, turn-off delay time is 41.7ns, and fall time is 26.7ns.
This MOSFET is packaged in a TO-220-3 (PG-TO220-3-1) package and is designed for through-hole mounting. It operates within a temperature range of -55°C to 175°C (TJ). The device is avalanche rated and dv/dt rated.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-220-3.
-55°C to 175°C.
10.3A at 25°C case temperature.
Typically 1.6V, with a range of 1.2V to 2V.
Maximum 154 mOhm at VGS=10V, ID=8.1A.
50W at 25°C case temperature.