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480 pcs
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480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Infineon SPP08P06PHXKSA1 is a P-channel MOSFET transistor designed for various electronic applications. It features a maximum drain-source voltage of -60V and a continuous drain current of -8.8A, with a power dissipation rating of 42W. The transistor utilizes SIPMOS™ technology and has a unipolar polarization.
This MOSFET has an on-state resistance of 0.3Ω and a gate-source voltage tolerance of ±20V. It is designed with an enhancement mode channel type. The component is housed in a PG-TO220-3 case and is intended for through-hole mounting (THT).
The SPP08P06PHXKSA1 is packaged in tubes, with a standard package quantity of 50 pieces. Its specifications make it suitable for power switching and control applications where a P-channel MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60V
-8.8A
42W
PG-TO220-3
Through Hole
RoHS3 Compliant
1 Unlimited