| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,020 pcs
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3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPP08N80C3XKSA1 is a high-voltage N-Channel Power MOSFET. It utilizes advanced CoolMOS technology, offering an 800V drain-source breakdown voltage and a continuous drain current of 8A at 25°C case temperature.
Key electrical characteristics include a maximum on-state resistance (Rds On) of 650mOhm at 5.1A and 10V gate drive, a gate threshold voltage (Vgs(th)) typically around 3V, and a maximum gate source voltage of ±20V. The MOSFET also boasts low input capacitance and gate charge, contributing to efficient switching performance.
Designed for industrial applications with high DC bulk voltage and switching applications like active clamp forward converters, this MOSFET comes in a TO-220-3 package suitable for through-hole mounting. Its operating temperature range is -55°C to 150°C.
Features such as extreme dv/dt rating and high peak current capability are highlighted in the datasheet. The component is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 8A at a case temperature of 25°C.
The drain-source breakdown voltage is 800V.
The Rds On (Max) is 650mOhm at a drain current of 5.1A and gate-source voltage of 10V.
The SPP08N80C3XKSA1 is supplied in a TO-220-3 package.
The operating temperature range is -55°C to 150°C.