| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
712 pcs
|
712 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
674 pcs
|
674 pcs | On Request | 1 | On Request | On Request | 1411+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon Technologies SPP08N50C3 is a high-voltage N-channel MOSFET from the Cool MOS™ family. It features a revolutionary high voltage technology with an ultra-low gate charge and periodic avalanche rating.
Key electrical specifications include a 500V drain-source breakdown voltage and a typical on-resistance of 0.6 Ohms at 4.6A and 25°C. The continuous drain current is rated at 7.6A at 25°C and 4.6A at 100°C. It also boasts an avalanche energy rating of 230 mJ for single pulses.
This transistor is designed for high-performance applications requiring efficient power switching. Its thermal characteristics include a junction-to-case thermal resistance of 1.5 K/W. The operating temperature range is from -55°C to +150°C.
The SPP08N50C3 is available in a PG-TO220 package, suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 500V.
The typical on-resistance is 0.6 Ohms at 4.6A and 25°C.
The continuous drain current is 7.6A at 25°C and 4.6A at 100°C.
The operating and storage temperature range is -55°C to +150°C.
The SPP08N50C3 is in a PG-TO220 package.