| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SPP07N60C3XKSA1 is an N-channel MOSFET manufactured by Infineon Technologies. It features a minimum drain-source breakdown voltage of 600V (typical 700V) and a continuous drain current rating of 7.3A at 25°C. The maximum on-resistance is 0.6Ω at a gate-source voltage of 10V. Gate threshold voltage is typically 3V with a maximum of 3.9V. The device offers input capacitance of 790pF and output capacitance of 260pF. It is rated for single pulse avalanche energy of 230mJ. The MOSFET is housed in a TO220-3 through-hole package, suitable for high-voltage switching applications such as power supplies and converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V minimum, 700V typical.
7.3A at 25°C case temperature.
0.54Ω typical, 0.6Ω maximum at VGS=10V, ID=4.6A.
3V typical, 3.9V maximum at ID=350µA.
TO220-3 through-hole.