| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,235 pcs
|
3235 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| FET Type | |
| Failure Rate | |
| Gate Charge | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present | |
| Technology |
This Infineon SPP07N60C3XKSA1 is an N-Channel MOSFET designed for power applications. It features a high Drain-to-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 7.3A at 25°C.
The MOSFET has a maximum On-Resistance (Rds On) of 600mΩ at 4.6A and 10V gate drive. The Gate Charge (Qg) is a maximum of 27nC at 10V, and the Input Capacitance (Ciss) is 790pF at 25V.
With a maximum power dissipation of 83W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this component is suitable for demanding environments. The device is packaged in a TO-220-3 configuration and is designed for through-hole mounting.
The maximum Drain-to-Source Voltage (Vdss) is 650V.
The continuous drain current (Id) at 25°C is 7.3A.
The maximum On-Resistance (Rds On) is 600mΩ at 4.6A drain current and 10V gate voltage.
The operating temperature range is -55°C to 150°C.
It is an N-Channel MOSFET.
The component is supplied in a TO-220-3 package.
It is designed for through-hole mounting.