SPP06N80C3XKSA1 The Infineon Technologies SPP06N80C3XKSA1 is an 800V N-Channel MOSFET in a TO-220-3 package. It offers a continuous drain current of 6A and a low on-resistance of 900mOhm at 10V gate drive.
Mfr Part #:

SPP06N80C3XKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPP06N80C3XKSA1 is an 800V N-Channel MOSFET in a TO-220-3 package. It offers a continuous drain current of 6A and a low on-resistance of 900mOhm at 10V gate drive.
✓ Total Stock: 51 pcs
$ Price Range: $2.56

SPP06N80C3XKSA1 Available from 1 distributor

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SPP06N80C3XKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SPP06N80C3XKSA1 Description

Short technical summary and product information.

The Infineon Technologies SPP06N80C3XKSA1 is a high-voltage N-Channel Power MOSFET from the CoolMOS family, designed for industrial applications requiring high DC bulk voltage. It features an 800V drain-source breakdown voltage and a continuous drain current capability of 6A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 900mOhm at 3.8A and 10V gate drive, an input capacitance of 785pF, and a gate charge of 31nC. The MOSFET is rated for a maximum power dissipation of 83W at 25°C and operates within a temperature range of -55°C to 150°C.

 

Packaged in a standard TO-220-3 configuration, this component is suitable for through-hole mounting. Its design incorporates extreme dv/dt rating and high peak current capability, making it suitable for switching applications like active clamp forward converters. The device is Pb-free and RoHS compliant.

SPP06N80C3XKSA1 Quick Information

Product Type: MOSFET
Canonical Name: SPP06N80C3XKSA1 N-Channel MOSFET

SPP06N80C3XKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SPP06N80C3XKSA1 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPP06N80C3XKSA1 Features

  • 800V drain-source breakdown voltage.
  • 6A continuous drain current.
  • 900mOhm maximum on-resistance.
  • TO-220-3 package for through-hole mounting.
  • Suitable for high voltage industrial applications.

SPP06N80C3XKSA1 Applications

  • Ideal for high-voltage switch-mode power supplies.
  • Used in power factor correction circuits.
  • Suitable for AC-DC converters and inverters.
  • Applied in motor control and lighting systems.
  • Reliable for high-frequency switching applications.

SPP06N80C3XKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The minimum drain-source breakdown voltage is 800V at Vgs=0V, Id=250µA.

What package is the SPP06N80C3XKSA1 available in?

It is available in a TO-220-3 through-hole package (PG-TO220-3).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the continuous drain current rating at 25°C?

The maximum continuous drain current is 6A at Tc=25°C.

What is the maximum on-state resistance?

The maximum on-state resistance is 0.9 Ohm at Vgs=10V, Id=3.8A, Tj=25°C.

What is the gate threshold voltage?

The typical gate threshold voltage is 3V, with a maximum of 3.9V at Vds=Vgs, Id=0.25mA.

What is the maximum power dissipation?

The maximum power dissipation is 83W at Tc=25°C.

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