| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SPP06N60C3 is an N-Channel Power MOSFET manufactured by Infineon Technologies. It is designed for high-voltage switching applications with a drain-source breakdown voltage of 600V minimum and a continuous drain current of 6.2A at 25°C case temperature. The device offers a maximum on-resistance of 0.75Ω at Vgs=10V and Id=3.9A, ensuring efficient power handling.
Key electrical characteristics include a typical gate threshold voltage of 3V, a total gate charge of 31nC maximum at Vgs=10V, and input capacitance of 620pF typical at Vds=25V. The MOSFET is capable of pulsed drain current up to 18.6A and single-pulse avalanche energy of 200mJ typical. Switching speeds are characterized by typical turn-on delay of 7ns and turn-off delay of 52ns.
The device is housed in a TO-220-3 through-hole package (PG-TO220-3-1) and supports an operating junction temperature range of -55°C to 150°C. Maximum power dissipation is 74W at 25°C case temperature, with a junction-to-case thermal resistance of 1.7 K/W. This MOSFET is suitable for power supplies, motor drives, and other high-voltage switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V minimum.
TO-220-3 (PG-TO220-3-1).
-55°C to 150°C.
6.2A at 25°C case temperature.
0.75Ω at Vgs=10V, Id=3.9A.
31nC at Vgs=10V.
74W at 25°C case temperature.