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1,200 pcs
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1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon SPP04N80C3 is a high-performance CoolMOS Power Transistor designed for demanding industrial applications requiring high DC bulk voltage. This component utilizes revolutionary high voltage technology, offering extreme dv/dt rating and high peak current capability.
Key electrical characteristics include a drain-source breakdown voltage of 800V and a typical on-state resistance of 1.1 Ohm at 2.5A and 25°C. The transistor also boasts a low gate charge (Qg,typ of 23nC) and ultra-low effective capacitances, contributing to its efficiency.
With a continuous drain current rating of 4A at 25°C and 63W of power dissipation at 25°C, the SPP04N80C3 is suitable for various switching applications, such as active clamp forward converters. It is packaged in a PG-TO220-3 case, suitable for through-hole mounting.
This RoHS 3 compliant transistor operates within a temperature range of -55°C to 150°C, making it robust for industrial environments. Its design emphasizes reliability and performance for high voltage switching needs.
The drain-source breakdown voltage is 800V minimum at VGS=0V and ID=250µA.
The SPP04N80C3 is available in a PG-TO220-3 package.
The operating and storage temperature range is -55°C to 150°C.
The continuous drain current is 4A at case temperature 25°C and 2.5A at 100°C.
The typical drain-source on-state resistance is 1.1Ω and maximum 1.3Ω at VGS=10V, ID=2.5A, TJ=25°C.
Typical switching times: turn-on delay 25ns, rise time 15ns, turn-off delay 72ns, fall time 12ns.