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SPP04N60S5 The Infineon Technologies SPP04N60S5 is an N-Channel Power MOSFET with a 600V drain-source voltage and a continuous drain current of 4.5A. It is supplied in a TO-220-3 package.
Mfr Part #:

SPP04N60S5

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPP04N60S5 is an N-Channel Power MOSFET with a 600V drain-source voltage and a continuous drain current of 4.5A. It is supplied in a TO-220-3 package.
✓ Total Stock: 2,000 pcs
$ Price Range: $2.56

SPP04N60S5 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SPP04N60S5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SPP04N60S5 Description

Short technical summary and product information.

The Infineon Technologies SPP04N60S5 is an N-Channel Power MOSFET designed for high voltage applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 4.5A at 25°C case temperature.

 

This MOSFET offers a low on-state resistance (Rds(on)) of 950mOhm at a gate-source voltage (Vgs) of 10V and a drain current of 2.8A. The gate threshold voltage (Vgs(th)) is 5.5V at 200µA. Key electrical characteristics include an input capacitance (Ciss) of 580pF and a gate charge (Qg) of 22.9nC.

 

With a maximum power dissipation of 150W (Tc=25°C) and an operating temperature range of -55°C to 150°C, the SPP04N60S5 is suitable for various power management tasks. It is housed in a through-hole TO-220-3 package, facilitating easy integration into circuit designs.

SPP04N60S5 Quick Information

Product Type: MOSFET
Canonical Name: SPP04N60S5 N-Channel MOSFET
Subcategory: N-Channel

SPP04N60S5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPP04N60S5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPP04N60S5 Features

  • 600V drain-source voltage rating.
  • 4.5A continuous drain current capability.
  • 950mOhm maximum on-state resistance.
  • Low gate charge for efficient switching.
  • TO-220-3 through-hole package.

SPP04N60S5 Applications

  • Suitable for high voltage power circuits.
  • Used in power supply applications.
  • Ideal for switching power converters.
  • Applicable in motor control systems.

SPP04N60S5 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SPP04N60S5?

The maximum drain-source voltage (Vds) for the SPP04N60S5 is 600V.

What is the continuous drain current of the SPP04N60S5?

The continuous drain current (Id) is 4.5A at 25°C case temperature and 2.8A at 100°C case temperature.

What is the on-state resistance (Rds(on)) of the SPP04N60S5?

The maximum on-state resistance (Rds(on)) is 950mOhm when the drain current is 2.8A and the gate-source voltage is 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SPP04N60S5 supplied in?

The SPP04N60S5 is supplied in a TO-220-3 package.

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