SPP03N60C3 The Infineon Technologies SPP03N60C3 is an N-Channel Power MOSFET with a 600V breakdown voltage and a 3.2A continuous drain current. It is supplied in a TO-220-3 package.
Mfr Part #:

SPP03N60C3

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPP03N60C3 is an N-Channel Power MOSFET with a 600V breakdown voltage and a 3.2A continuous drain current. It is supplied in a TO-220-3 package.
✓ Total Stock: 1,400 pcs
$ Price Range: $2.56

SPP03N60C3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,400 pcs
1400 pcs On Request 1 On Request On Request 1349+ On Request On Request

SPP03N60C3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SPP03N60C3 Description

Short technical summary and product information.

The Infineon Technologies SPP03N60C3 is a high-voltage N-Channel Power MOSFET designed for various power applications. It features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current rating of 3.2A at 25°C. The MOSFET offers a low on-resistance (Rds(on)) of 1.4 Ohms maximum at 2A and 10V gate-source voltage, contributing to efficient power transfer.

 

With a gate threshold voltage (Vgs(th)) of 3.9V maximum and a gate charge (Qg) of 17nC maximum, this device is suitable for applications requiring fast switching. The input capacitance (Ciss) is rated at 400pF maximum. The operating temperature range is from -55°C to 150°C, and it has a maximum power dissipation of 38W.

 

The SPP03N60C3 is housed in a TO-220-3 package, designed for through-hole mounting. This package provides adequate thermal dissipation for its power rating. The component also features a reverse diode dv/dt rating of 15 V/ns, indicating robustness in certain switching scenarios.

SPP03N60C3 Quick Information

Product Type: MOSFET
Series: COOLMOS
Canonical Name: SPP03N60C3 N-Channel Power MOSFET
Subcategory: N-Channel

SPP03N60C3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPP03N60C3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPP03N60C3 Features

  • 600V drain-to-source breakdown voltage.
  • 3.2A continuous drain current.
  • 1.4 Ohm maximum on-resistance.
  • 17nC maximum gate charge.
  • TO-220-3 package for through-hole mounting.

SPP03N60C3 Applications

  • Suitable for high-voltage power applications.
  • Used in power supply switching circuits.
  • Applicable for motor control systems.
  • Ideal for general-purpose power conversion.

SPP03N60C3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the SPP03N60C3?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current rating of the SPP03N60C3?

The continuous drain current is 3.2A at 25°C.

What is the maximum on-resistance (Rds(on)) for this MOSFET?

The maximum Rds(on) is 1.4 Ohms at a drain current of 2A and gate-source voltage of 10V.

What is the operating temperature range for the SPP03N60C3?

The operating temperature range is -55°C to 150°C.

What package type is the SPP03N60C3 supplied in?

The SPP03N60C3 is supplied in a TO-220-3 package.

What is the RoHS status of the SPP03N60C3?

The RoHS status is RoHS3 Compliant.

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