| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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The Infineon Technologies SPP02N80C3 is a high-voltage N-Channel Power MOSFET utilizing CoolMOS technology. It is designed for industrial applications requiring high DC bulk voltage and switching applications like active clamp forward converters.
Key electrical specifications include a Drain-Source Breakdown Voltage (Vds) of 800V and a continuous drain current of 2A at 25°C case temperature. The on-state resistance (Rds On) is a maximum of 2.7 Ohm at 1.2A drain current and 10V gate-source voltage. The device features a typical gate charge of 16 nC.
This MOSFET is housed in a TO-220-3 package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). The component is RoHS compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 800 V minimum.
The SPP02N80C3 comes in a TO-220-3 through-hole package (PG-TO220-3-1).
The junction temperature range is -55°C to 150°C.
The gate threshold voltage is typically 3 V, with a minimum of 2.1 V and maximum of 3.9 V at Id=0.12 mA.
The maximum on-resistance is 2.7 Ohm at Id=1.2A and Vgs=10V, with a typical value of 2.4 Ohm.
The typical input capacitance is 290 pF at Vds=100V.
The total gate charge is typically 16 nC at Vgs=10V.