SPP02N80C3 The Infineon Technologies SPP02N80C3 is an N-Channel Power MOSFET designed for industrial applications. It features a high voltage rating and a TO-220-3 package.
Mfr Part #:

SPP02N80C3

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPP02N80C3 is an N-Channel Power MOSFET designed for industrial applications. It features a high voltage rating and a TO-220-3 package.
✓ Total Stock: 15,000 pcs
$ Price Range: $2.56

SPP02N80C3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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SPP02N80C3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SPP02N80C3 Description

Short technical summary and product information.

The Infineon Technologies SPP02N80C3 is a high-voltage N-Channel Power MOSFET utilizing CoolMOS technology. It is designed for industrial applications requiring high DC bulk voltage and switching applications like active clamp forward converters.

 

Key electrical specifications include a Drain-Source Breakdown Voltage (Vds) of 800V and a continuous drain current of 2A at 25°C case temperature. The on-state resistance (Rds On) is a maximum of 2.7 Ohm at 1.2A drain current and 10V gate-source voltage. The device features a typical gate charge of 16 nC.

 

This MOSFET is housed in a TO-220-3 package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). The component is RoHS compliant and has a Moisture Sensitivity Level (MSL) of 1.

SPP02N80C3 Quick Information

Product Type: MOSFET
Canonical Name: Infineon Technologies SPP02N80C3 N-Channel Power MOSFET
Subcategory: Power MOSFET

SPP02N80C3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SPP02N80C3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPP02N80C3 Features

  • 800V Drain-Source Breakdown Voltage.
  • 2A Continuous Drain Current.
  • 2.7 Ohm Maximum Rds On.
  • 16 nC Typical Gate Charge.
  • TO-220-3 Through Hole Package.

SPP02N80C3 Applications

  • Suitable for high-voltage DC-DC converters.
  • Used in power factor correction circuits.
  • Ideal for switch-mode power supplies.
  • Applicable in lighting ballasts.
  • For AC-DC flyback converters.

SPP02N80C3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SPP02N80C3?

The drain-source breakdown voltage is 800 V minimum.

What is the package type of the SPP02N80C3?

The SPP02N80C3 comes in a TO-220-3 through-hole package (PG-TO220-3-1).

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

What is the gate threshold voltage?

The gate threshold voltage is typically 3 V, with a minimum of 2.1 V and maximum of 3.9 V at Id=0.12 mA.

What is the on-resistance of the SPP02N80C3?

The maximum on-resistance is 2.7 Ohm at Id=1.2A and Vgs=10V, with a typical value of 2.4 Ohm.

What is the input capacitance?

The typical input capacitance is 290 pF at Vds=100V.

What is the total gate charge?

The total gate charge is typically 16 nC at Vgs=10V.

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