| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | 1409+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel Power MOSFET from Infineon Technologies, part number SPP02N60C3, is designed for high voltage applications. It offers a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 1.8A at a case temperature.
The MOSFET has a low on-state resistance (Rds On) of 3 Ohms maximum at 1.1A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 3.9V maximum at 80µA. Key electrical characteristics include an input capacitance (Ciss) of 200 pF and a gate charge (Qg) of 12.5 nC.
It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 25W (Tc). The component is housed in a TO-220-3 package and is suitable for through-hole mounting.
Features such as ultra-low gate charge and extreme dv/dt ratings make this MOSFET suitable for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The SPP02N60C3 has a drain-source voltage (Vdss) of 600V.
The SPP02N60C3 is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 3 Ohms at 1.1A drain current and 10V gate-source voltage.
The typical gate threshold voltage is 2.5V, with a maximum of 3.9V at 80µA.
The total gate charge is 4.5 nC at 10V gate-source voltage.
Typical turn-on delay is 19 ns, rise time 16 ns, turn-off delay 29 ns, and fall time 15 ns.