| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,305 pcs
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2305 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SYNCMOS SPN2304WS23RGB is an N-Channel logic enhancement mode power MOSFET designed using high cell density DMOS trench technology. This technology is optimized to minimize on-state resistance, offering a typical RDS(ON) of 30mΩ at 10V Vgs and 6.5A Id, and 33mΩ at 4.5V Vgs. With a maximum drain-source voltage of 30V, this MOSFET is particularly suited for low voltage applications.
These devices are ideal for power management in battery-powered circuits such as cellular phones and notebook computers. The design focuses on achieving low in-line power loss in a very small form factor, making it suitable for applications where efficiency and space are critical.
The SPN2304WS23RGB is manufactured using TSMC wafer technology and processed by JCET (Jiangsu Changjiang Electronics Technology).
The maximum drain-source voltage is 30V.
The continuous drain current is 6.5A.
The typical on-state resistance is 30mΩ at 10V Vgs and 6.5A Id.
The typical on-state resistance is 33mΩ at 4.5V Vgs and 6.5A Id.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.