| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,300 pcs
|
2300 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Package / Case | |
| Tape & Reel |
The SPN2302S23RGB is an N-Channel logic enhancement mode power field-effect transistor manufactured by SYNCMOS. It utilizes a high cell density DMOS trench technology, optimized for minimizing on-state resistance. This makes it suitable for low-voltage applications such as power management in notebooks, portable equipment, battery-powered systems, DC/DC converters, load switches, DSCs, and LCD display inverters.
Key electrical characteristics include a drain-source breakdown voltage of 20V. At a gate-source voltage of 4.5V and a drain current of 3.6A, the typical on-resistance is 80mΩ. At a gate-source voltage of 2.5V and a drain current of 3.1A, the typical on-resistance is 95mΩ. The device also features a typical gate threshold voltage of 1.2V.
Packaged in a compact SOT-23-3L surface-mount package, the SPN2302S23RGB is designed for applications where space is limited and low power loss is critical. It is available in a tape and reel format for automated assembly processes. The device is RoHS and Halogen-free compliant.
20V
SOT-23-3L
-55°C to 150°C
50mΩ
5.4nC typical
1.6A during diode conduction