| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,058 pcs
|
27058 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Package / Case | |
| Tape & Reel |
The SPN2302DS23RGB is an N-Channel logic enhancement mode power field-effect transistor manufactured by SYNCMOS using high cell density DMOS trench technology. This technology is optimized to minimize on-state resistance, making the device suitable for low-voltage applications where low power loss is critical.
Key electrical characteristics include a drain-source breakdown voltage of 20V. At a gate-source voltage of 4.5V and a drain current of 3.6A, the typical on-resistance is 85mΩ, with a maximum of 97mΩ. The typical gate threshold voltage is 0.45V, with a maximum of 1.2V. Dynamic characteristics include a total gate charge of 5.4nC at VDS=10V and VGS=4.5A.
This MOSFET is designed for applications such as power management in notebooks, portable equipment, battery-powered systems, DC/DC converters, load switches, DSCs, and LCD display inverters. Its SOT-23 package is ideal for space-constrained designs.
The device operates within a junction temperature range of -55°C to 150°C and has a thermal resistance of 100°C/W (junction to ambient). It is Pb-Free and Halogen-Free.
20V.
85mΩ at VGS=4.5V.
3.2A at 25°C ambient temperature.
-55°C to 150°C junction temperature.
SOT-23 surface mount package.
Typically 0.45V, maximum 1.2V.