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SPN03N60C3 The Infineon Technologies SPN03N60C3 is an N-Channel MOSFET with a 650V drain-source voltage and 700mA continuous drain current. It is supplied in a Surface Mount SOT-223 package.
Mfr Part #:

SPN03N60C3

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPN03N60C3 is an N-Channel MOSFET with a 650V drain-source voltage and 700mA continuous drain current. It is supplied in a Surface Mount SOT-223 package.
✓ Total Stock: 8,000 pcs
$ Price Range: $2.56

SPN03N60C3 Available from 1 distributor

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✓ Non-Authorised
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8,000 pcs
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SPN03N60C3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SPN03N60C3 Description

Short technical summary and product information.

The Infineon Technologies SPN03N60C3 is an N-Channel Power MOSFET designed with Cool MOS™ technology. It offers a high drain-source breakdown voltage of 650V and a continuous drain current of 700mA at 25°C.

 

Key electrical characteristics include a low on-state resistance of 1.4 Ohms at 2A and 10V, a gate threshold voltage of 3V, and a total gate charge of 13nC. The device features ultra-low gate charge and effective capacitances, along with extreme dv/dt rating.

 

This MOSFET is packaged in a TO-261-4, TO-261AA (PG-SOT223-4) package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C.

 

The SPN03N60C3 is suitable for various power switching applications where high voltage and efficient performance are required.

SPN03N60C3 Quick Information

Product Type: MOSFET
Canonical Name: Infineon Technologies SPN03N60C3 N-Channel MOSFET
Subcategory: N-Channel

SPN03N60C3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SPN03N60C3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPN03N60C3 Features

  • 650V drain-source breakdown voltage.
  • 700mA continuous drain current.
  • 1.4 Ohm maximum Rds On.
  • N-Channel MOSFET technology.
  • SOT-223 surface mount package.

SPN03N60C3 Applications

  • Suitable for high voltage applications.
  • Efficient power switching designs.
  • Used in power supply circuits.
  • Ideal for general purpose switching.

SPN03N60C3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SPN03N60C3?

The SPN03N60C3 has a drain-source breakdown voltage of 600V (minimum) and a drain-source voltage rating of 650V (Vdss).

What package does the SPN03N60C3 come in?

The SPN03N60C3 is available in a TO-261-4 (TO-261AA) package, also known as PG-SOT223-4.

What is the operating temperature range of the SPN03N60C3?

The operating junction temperature range is -55°C to 150°C.

What is the gate threshold voltage of the SPN03N60C3?

The gate threshold voltage is typically 3V, with a range of 2.1V to 3.9V at ID=135µA.

What is the maximum drain-source on-resistance?

The maximum drain-source on-resistance is 1.4 Ohm at VGS=10V, ID=2A, Tj=150°C.

What is the total gate charge of the SPN03N60C3?

The total gate charge is typically 13 nC and maximum 17 nC at VGS=0 to 10V.

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