| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Thermal Resistance | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPN02N60C3 is an N-Channel MOSFET belonging to the CoolMOS Power Transistor family. It is designed with revolutionary high voltage technology, offering an ultra-low gate charge and effective capacitances. This MOSFET boasts a maximum drain-source voltage of 650V and a continuous drain current of 400mA at 25°C ambient temperature, derating to 300mA at 70°C.
Key electrical characteristics include a maximum on-state resistance (Rds On) of 2.5 Ohms at 1.1A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) ranging from 2.1V to 3.9V. The device operates within a temperature range of -55°C to 150°C.
Packaged in a TO-261-4, TO-261AA (PG-SOT223-4) format, the SPN02N60C3 is suitable for surface mount applications. Its features make it suitable for various power switching applications where high voltage and efficiency are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V maximum.
Surface-mount SOT223-4 (PG-SOT223-4) package.
-55°C to 150°C (junction temperature).
Minimum 2.1V, typical 3V, maximum 3.9V at 80µA.
Maximum 2.5 Ohm at 1.1A, 10V gate drive.
200 pF at 25V drain-source.
Typical 10 nC.