| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,000 pcs
|
40000 pcs | On Request | 1 | On Request | On Request | 11+09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPN01N60C3 is a Cool MOS™ Power Transistor featuring a 650V drain-source breakdown voltage and a continuous drain current of 300mA at 25°C. It offers a low on-state resistance of 6 Ohms at 500mA and 10V gate drive voltage.
This N-Channel MOSFET utilizes advanced technology for high voltage applications, characterized by ultra-low gate charge and extreme dv/dt rating. Its electrical characteristics include an input capacitance of 100 pF and a gate threshold voltage typically around 3V.
The device is housed in a SOT-223 package, suitable for surface mounting. The operating temperature range is -55°C to 150°C, with a maximum power dissipation of 1.8W at 25°C ambient temperature. Thermal resistance from junction to soldering point is 35 K/W.
Key electrical parameters include a typical transconductance of 0.45 S and various switching characteristics such as turn-on delay time of 45 ns and fall time of 30 ns. The integrated diode provides a continuous forward current of 0.3A.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600V minimum, with a nominal drain-source voltage of 650V.
The SPN01N60C3 is available in a TO-261-4 (TO-261AA) surface-mount package, also designated as PG-SOT223-4.
The operating junction temperature range is -55°C to 150°C.
Typical gate threshold voltage is 3V, with maximum of 3.7V at 250µA drain current.
Continuous drain current is 300mA at 25°C ambient temperature, derated to 200mA at 70°C.
Typical on-resistance is 5.5Ω, maximum 6Ω at VGS=10V, ID=0.5A.