SPM6M080-010D The Sensitron Semiconductor SPM6M080-010D is a 100V, 80A three-phase MOSFET bridge IGBT module. It offers high current handling capabilities for power electronics applications.
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SPM6M080-010D

Available from 1 distributors
Mfr Name: Sensitron Semiconductor
Sensitron Semiconductor
The Sensitron Semiconductor SPM6M080-010D is a 100V, 80A three-phase MOSFET bridge IGBT module. It offers high current handling capabilities for power electronics applications.
✓ Total Stock: 2 pcs
$ Price Range: $0.35

SPM6M080-010D Available from 1 distributor

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✓ Non-Authorised
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SPM6M080-010D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SPM6M080-010D Description

Short technical summary and product information.

The Sensitron Semiconductor SPM6M080-010D is a robust IGBT module designed for demanding power applications. It features a Drain-to-Source Breakdown Voltage (BVDSS) of 100V and a Continuous Drain Current (ID) of 80A at 25°C case temperature.

 

This module boasts a low Static Drain-to-Source On Resistance (RDS(on)) of 0.009Ω typical at 25°C, ensuring efficient power transfer. The Pulsed Drain Current (IDM) can reach up to 200A, providing ample headroom for transient loads. The operating junction temperature (Tjmax) is rated up to 150°C, allowing for reliable performance in high-temperature environments.

 

With a maximum thermal resistance (RthJC) of 150°C/W, this IGBT module is suitable for integration into various power conversion systems. Its design as a three-phase MOSFET bridge makes it a versatile component for motor control, inverters, and power supply applications.

SPM6M080-010D Quick Information

Product Type: IGBT Module
Canonical Name: Sensitron Semiconductor SPM6M080-010D Three Phase MOSFET Bridge
Subcategory: Three Phase MOSFET Bridge

SPM6M080-010D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPM6M080-010D Estimated Pricing

Qty Low High
1+ $0.35 $0.35

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPM6M080-010D Features

  • 100V Drain-to-Source Breakdown Voltage.
  • 80A Continuous Drain Current.
  • Low 0.009Ω typical On-Resistance.
  • 150°C Maximum Operating Junction Temperature.
  • Three-phase MOSFET bridge configuration.

SPM6M080-010D Applications

  • Ideal for motor control applications.
  • Suitable for power inverter designs.
  • Used in power supply circuits.
  • Applicable for industrial automation.

SPM6M080-010D FAQs

7 frequently asked questions generated from this part’s specifications.
What is the continuous drain current for the SPM6M080-010D?

The continuous drain current is 80A at a case temperature of 25°C.

What is the breakdown voltage of the SPM6M080-010D?

The Drain-to-Source Breakdown Voltage (BVDSS) is 100V.

What is the typical on-resistance of this IGBT module?

The typical static drain-to-source on-resistance is 0.009Ω at 25°C.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

What is the RoHS status of the SPM6M080-010D?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL) for this part?

1 Unlimited

Is this component REACH unaffected?

REACH Unaffected

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