| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The Sensitron Semiconductor SPM6M080-010D is a robust IGBT module designed for demanding power applications. It features a Drain-to-Source Breakdown Voltage (BVDSS) of 100V and a Continuous Drain Current (ID) of 80A at 25°C case temperature.
This module boasts a low Static Drain-to-Source On Resistance (RDS(on)) of 0.009Ω typical at 25°C, ensuring efficient power transfer. The Pulsed Drain Current (IDM) can reach up to 200A, providing ample headroom for transient loads. The operating junction temperature (Tjmax) is rated up to 150°C, allowing for reliable performance in high-temperature environments.
With a maximum thermal resistance (RthJC) of 150°C/W, this IGBT module is suitable for integration into various power conversion systems. Its design as a three-phase MOSFET bridge makes it a versatile component for motor control, inverters, and power supply applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.35 | $0.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 80A at a case temperature of 25°C.
The Drain-to-Source Breakdown Voltage (BVDSS) is 100V.
The typical static drain-to-source on-resistance is 0.009Ω at 25°C.
The maximum operating junction temperature is 150°C.
RoHS3 Compliant
1 Unlimited
REACH Unaffected