| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,455 pcs
|
3455 pcs | On Request | 1 | On Request | On Request | 0622+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPI20N60CFD is a high-performance N-Channel Power MOSFET. It features a maximum drain-to-source voltage (Vds) of 600V and a continuous drain current (Id) of 20.7A at a case temperature (Tc) of 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 220mOhm at 13.1A and 10V gate-source voltage, contributing to improved conduction efficiency.
With a gate charge (Qg) of 124nC at 10V and an input capacitance (Ciss) of 2400pF at 25V, this device is suitable for various power switching applications. The operating temperature range is from -55°C to 150°C (TJ), and it has a maximum power dissipation of 208W (Tc).
The SPI20N60CFD is packaged in a TO-262-3 Long Leads, I²Pak, TO-262AA package, suitable for through-hole mounting. Its technology is based on MOSFET (Metal Oxide) principles, offering robust performance for demanding power designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
-55°C to 150°C (junction temperature).
TO-262-3 Long Leads, I²Pak, TO-262AA (Supplier package PG-TO262-3-1).
5V at 1mA drain current.
2400pF at 25V drain-source voltage.
220mOhm at 13.1A, 10V.
124nC at 10V gate-source voltage.