| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPD50P03LGXT is a P-Channel MOSFET designed for various power applications. It features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous drain current of 50A (Tc).
Key electrical characteristics include a low on-resistance (Rds On) of 7mOhm at 50A and 10V Vgs, and a gate charge (Qg) of 126 nC at 10V Vgs. The device operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 150W (Tc).
This MOSFET is suitable for surface mount applications, utilizing the TO-252-5, DPak (4 Leads + Tab), TO-252AD package. Its robust design and specifications make it a reliable choice for power switching and control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
TO-252-5 (DPak with 4 leads plus tab, TO-252AD).
-55°C to 175°C (junction temperature).
50A at Tc.
7mOhm maximum at Vgs=10V, Id=50A.
2V maximum at Id=250µA.
±20V.