| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,974 pcs
|
10974 pcs | On Request | 1 | On Request | On Request | 1732+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPD50N03S2-07G is an N-Channel Power MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 50A (Tc). The on-resistance (Rds On) is a maximum of 7.3mOhm at 50A and 10V gate-source voltage. This MOSFET operates within a temperature range of -55°C to 175°C (TJ).
This component utilizes MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 4V at 85µA. The maximum gate source voltage is ±20V. It has an input capacitance (Ciss) of 2170pF at 25V and a gate charge (Qg) of 46.5nC at 10V. The maximum power dissipation is rated at 136W (Tc).
The SPD50N03S2-07G is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 case and is designed for surface mounting. The supplier device package is PG-TO252-3-11. It is compliant with RoHS3 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The maximum on-resistance is 7.3mOhm at 50A and 10V.
The operating temperature range is -55°C to 175°C (TJ).
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, it is RoHS3 compliant.
The Moisture Sensitivity Level is 1 Unlimited.