| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The Infineon Technologies SPD35N10 is a high-performance N-Channel MOSFET. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 35A at 25°C case temperature, with a reduced current rating of 26.4A at 100°C. The device exhibits a low on-state resistance (Rds(on)) of 44mOhm maximum at 26.4A and 10V gate-source voltage, and a typical value of 36mOhm.
With a maximum power dissipation of 150W (Tc=25°C), the SPD35N10 is suitable for demanding applications. It operates across a wide temperature range from -55°C to 175°C. The MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting.
Key electrical characteristics include an input capacitance (Ciss) of up to 1570pF at 25V and a gate charge (Qg) of up to 65nC at 10V. The device is also avalanche rated and dv/dt rated, indicating robustness in transient conditions. Its thermal resistance from junction to case is a low 1 K/W, and junction to ambient (SMD) is 50 K/W with adequate cooling.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
35A at 25°C case temperature.
TO-252-3 (DPak) surface mount package.
-55°C to 175°C junction temperature.
2.1V to 4V.
44 mOhm maximum at Vgs=10V.