| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,568 pcs
|
2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The SPD30P06P is a P-channel enhancement mode MOSFET designed for power management applications. It features a drain-source breakdown voltage of -60V and a continuous drain current of -30A at 25°C case temperature. The device offers low on-state resistance with a typical value of 0.066 ohms at VGS=-10V, ensuring efficient power handling. Gate charge characteristics include a total gate charge of -32 nC typical, enabling fast switching with turn-on delay time of 8.7 ns and rise time of 25.2 ns. The MOSFET is housed in a TO252-3 (DPAK) surface-mount package, suitable for automated assembly. It also provides avalanche energy capability of 250 mJ single pulse, making it robust for inductive load switching. Typical applications include DC-DC converters, load switches, and battery protection circuits in consumer and industrial electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -60 V minimum at VGS=0, ID=-250 µA.
The continuous drain current is -30 A maximum at TC=25°C and -21.5 A at TC=100°C.
The gate threshold voltage is typically -3 V, with a range of -2.1 V to -4 V at VGS=VDS, ID=-1.7 mA.
The drain-source on-state resistance is typically 0.066 ohms and maximum 0.075 ohms at VGS=-10V, ID=-21.5A.
The SPD30P06P comes in a TO252-3 (DPAK) surface-mount package.