| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,850 pcs
|
6850 pcs | On Request | 1 | On Request | On Request | 0845+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SPD30N03S2L-10 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a drain-source breakdown voltage of 30V and a continuous drain current rating of 30A, making it suitable for a variety of power switching applications.
Key electrical characteristics include a gate threshold voltage of 1.2V typical (1.6V typical, 2V maximum) at VGS=VDS and ID=50µA. The zero gate voltage drain current is specified as 0.01mA maximum at 25°C and 100µA maximum at 125°C, indicating low leakage performance.
The device is housed in a TO252-3 (DPAK) surface-mount package, which provides efficient thermal management and is suitable for automated assembly processes. This MOSFET is designed for applications requiring high efficiency and reliable switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V minimum at VGS=0V and ID=1mA.
The gate threshold voltage is 1.2V typical, 1.6V typical, and 2V maximum at VGS=VDS and ID=50µA.
The zero gate voltage drain current is 0.01mA maximum at VDS=30V, VGS=0V, and Tj=25°C, and 100µA maximum at Tj=125°C.