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SPD18P06PGBTMA1 The Infineon Technologies SPD18P06PGBTMA1 is a P-Channel MOSFET with a drain-source voltage of 60V and a continuous drain current of 18.6A. It is supplied in a TO-252-3 package.
Mfr Part #:

SPD18P06PGBTMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPD18P06PGBTMA1 is a P-Channel MOSFET with a drain-source voltage of 60V and a continuous drain current of 18.6A. It is supplied in a TO-252-3 package.
✓ Total Stock: 6,020 pcs
$ Price Range: $2.13

SPD18P06PGBTMA1 Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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6,020 pcs
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6020 pcs On Request 1 On Request On Request On Request On Request On Request
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SPD18P06PGBTMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SPD18P06PGBTMA1 Description

Short technical summary and product information.

The SPD18P06PGBTMA1 from Infineon Technologies is a P-Channel MOSFET designed for power applications. It features a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 18.6A at a case temperature of 25°C. The device offers a low on-state resistance (Rds(on)) of 130mOhm at 13.2A and 10V gate-source voltage.

 

This MOSFET operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 80W at 25°C. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of -3V typical and input capacitance (Ciss) of 860pF typical. The device is avalanche rated and dv/dt rated, indicating robustness in demanding conditions.

 

Packaged in a TO-252-3 (DPak) surface-mount configuration, the SPD18P06PGBTMA1 is suitable for designs where space is a consideration. Its enhancement mode operation and P-channel configuration make it a versatile component for power switching and control circuits.

SPD18P06PGBTMA1 Quick Information

Product Type: MOSFET
Canonical Name: SPD18P06P G P-Channel MOSFET
Subcategory: P-Channel

SPD18P06PGBTMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPD18P06PGBTMA1 Estimated Pricing

Qty Low High
1+ $2.13 $2.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPD18P06PGBTMA1 Features

  • P-Channel MOSFET with 60V Vds.
  • Continuous drain current of 18.6A.
  • Low Rds(on) of 130mOhm typical.
  • TO-252-3 surface mount package.
  • Avalanche and dv/dt rated.

SPD18P06PGBTMA1 Applications

  • Suitable for power switching circuits.
  • Used in DC-DC converters.
  • Ideal for motor control applications.
  • Applicable in battery management systems.

SPD18P06PGBTMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SPD18P06PGBTMA1?

-60V maximum.

What package does the SPD18P06PGBTMA1 come in?

Surface mount TO-252-3 (DPak) package, also known as PG-TO252-3.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What is the gate threshold voltage range?

-2.1V to -4V, with typical -3V at ID=-1mA.

What is the on-resistance of this MOSFET?

Typical 100 mOhm, maximum 130 mOhm at VGS=-10V, ID=-13.2A.

What is the continuous drain current rating?

-18.6A at case temperature 25°C, derated to -13.2A at 100°C.

What is the gate charge?

Maximum 33 nC at VGS=10V.

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